Type Designator: P13009
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Material of Transistor: Si
More Buku Persamaan Ic Dan Transistor Data images. Untuk persamaan tr A1160 di buku persamaan transistor saya tidak ditemukan (tidak ada), akan tetapi ini adalah datanya: vcb max 20v, vce max10v, veb max 6v, ic max 2A, hfe bias 500ma. Perbedaan mesin cuci 1 dan 2 tabung dan cara. TRANSISTOR TESTER Circuit The 555 operates at 2Hz.
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3PB
P13009 Transistor Equivalent Substitute - Cross-Reference Search
![]() P13009 Datasheet (PDF)
1.1. sbp13009s.pdf Size:417K _update
SBP13009-S SBP13009-S SBP13009-S SBP13009-S High Voltage Fast-Switching NPN Power Transistor Features � Very High Switching Speed � High Voltage Capability � Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed Switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Para
1.2. sbp13009k.pdf Size:316K _update
SBP13009-K SBP13009-K SBP13009-K SBP13009-K HighVoltageFast-SwitchingNPNPowerTransistor Features ■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed Switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Parameter
1.3. sbp13009o.pdf Size:334K _update
SBP13009-O SBP13009-O SBP13009-O SBP13009-O High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA B B B B C C C C
1.4. fjp13009.pdf Size:181K _upd
March 2007 FJP13009 High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* TC = 25°C unless otherwise noted (notes_1) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter
1.5. wbp13009-k.pdf Size:328K _upd
WBP13009-K WBP13009-K WBP13009-K WBP13009-K High Voltage Fast- Switching NPN Power Transistor Features ■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed Switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Par
1.6. fjp13009.pdf Size:123K _fairchild_semi
March 2007 FJP13009 High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* TC = 25°C unless otherwise noted (notes_1) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 40
1.7. p13009a.pdf Size:113K _jdsemi
R P13009A 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Fluorescent Lamp、Electronic Ballast、 Computer Switch Power Supply 2. 2. 2.FE
1.8. p13009.pdf Size:115K _jdsemi
R P13009 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Fluorescent Lamp、Electronic Ballast、 Computer Switch Power Supply 2. 2. 2.FEA
Datasheet: CJD204R, CJD3439, CJD81, CJD86, CJE13007, CJF100, CJF101, CJF102, TIP31C, CJF106, CJF107, CMBTA42, CMBTA44, CMBTA92, CN1016, CP1016, CP756.
LISTLast Update
BJT: 3DD2553 | 2SD1710C | NP061A3 | KTC601UY | KSC5802D | FA1L3Z-L38 | FA1L3Z-L37 | FA1L3Z-L36 | EB102 | DC8550E | DC8550D | DC8550C | DC8550B | CHTA27XPT | CHT858BWPTS | CHT858BWPTR | CHT858BWPTQ | CHT857BTPTS | CHT857BTPTR | CHT857BTPTQ |
P13009Datasheet (PDF)1.1. Size:417K updateSBP13009-SSBP13009-SSBP13009-SSBP13009-SHigh Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedSwitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Para1.2. Size:316K updateSBP13009-KSBP13009-KSBP13009-KSBP13009-KHighVoltageFast-SwitchingNPNPowerTransistorFeatures■ Very High Switching Speed■ High Voltage Capability■ Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedSwitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Parameter1.3. Size:334K updateSBP13009-OSBP13009-OSBP13009-OSBP13009-OHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures◆ Very High Switching Speed◆ High Voltage Capability◆ Wide Reverse Bias SOABBBBCCCC1.4.
Size:181K updMarch 2007FJP13009High Voltage Fast-Switching NPN Power Transistor. High Voltage Capability. High Switching Speed. Suitable for Electronic Ballast and Switching Mode Power SupplyTO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings. TC = 25°C unless otherwise noted (notes1)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter1.5. Size:328K updWBP13009-KWBP13009-KWBP13009-KWBP13009-KHigh Voltage Fast- Switching NPN Power TransistorFeatures■ Very High Switching Speed■ High Voltage Capability■ Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedSwitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Par1.6. Size:123K fairchildsemiMarch 2007FJP13009High Voltage Fast-Switching NPN Power Transistor High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power SupplyTO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings.
TC = 25°C unless otherwise noted (notes1)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter Voltage 401.7. Size:113K jdsemiRP13009A深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司www.jdsemi.cn Bipolar Junction TransistorShenZhen Jingdao Electronic Co.,Ltd.◆Si NPN◆RoHS COMPLIANT1.1.1.APPLICATION1.Fluorescent Lamp、Electronic Ballast、Computer Switch Power Supply2.2.2.FE1.8. Size:115K jdsemiRP13009深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司www.jdsemi.cn Bipolar Junction TransistorShenZhen Jingdao Electronic Co.,Ltd.◆Si NPN◆RoHS COMPLIANT1.1.1.APPLICATION1.Fluorescent Lamp、Electronic Ballast、Computer Switch Power Supply2.2.2.FEA.
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